The IBD (Ion Beam Deposition) System

The IBD comes equipped with a Commonwealth 12 cm DC ion source for uniform etching and an 8 cm ion source for ion beam deposition. The target selector contains 4 materials at any given time (currently: Al203, SiO2, C, Cu). The stage is chiller-cooled and has automatic stage spin.

Managers: Oukjae Lee and Lin Xue

Scheduling

Intlvac Nanoquest Ion Etch System w/ Endpoint Detector

The Intlvac Ion Etch system features a Commonwealth 12 cm DC ion source for uniform etching over wide areas. An attached Hiden SIMS detector allows real-time detection of etched material making this tool ideal for mill-stop with accuracies less than 1 nm. Stage angle and spin are stepper motor controlled with stage angle accuracy of .1 degrees.

Managers: Praveen Gowtham and Junbo Park

Scheduling

AJA 7-Gun Sputtering System

The AJA is a load-locked seven gun magnetron sputtering system with 1 RF and 5 DC power supplies. Typical base pressures are around 4x10-9 torr. Additional gas options are nitrogen, oxygen, and hydrogen. The system is capable of in-situ annealing up to 450 C.

Managers: Luqiao Liu and Chi-Feng Pai

D7 Growth and Characterization Chamber

This chamber is, in fact, many connected chambers which can be valved off from each other. The various chambers include an electron-gun evaporator, a 5-gun magnetron sputter system, and two STMs for surface topography and LDOS information as well as for BEEM (Ballistic Electron Emission Microscopy). Samples can be loaded into a vacuum jacket for transfer into the XPS.

XPS with Loadlock

We use X-Ray Photoelectron Spectroscopy (XPS) for thin-film surface characterization. It utilizes monochromated X-Rays to eject core secondary electrons which are collected and energy-analyzed. Careful analysis of the data can reveal quantitative information on film surface stoichiometry and bonding. This system has base pressure of 9x10-10 and can accomodate vacuum sample transfer.

E7 Clark Hall
Cornell University
Ithaca, NY 14853
Ph: (607) 255-7500
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SCHOOL OF APPLIED AND ENGINEERING PHYSICS